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Si3867DV
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
- 20
R DS(on) ( Ω )
0.051 at V GS = - 4.5 V
0.067 at V GS = - 3.3 V
0.100 at V GS = - 2.5 V
I D (A)
- 5.1
- 4.5
- 3.7
? Halogen-free According to IEC 61249-2-21
Definition
? TrenchFET ? Power MOSFET
? PWM Optimized
? Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
? DC/DC
- HDD
- Power Supplies
? Portable Devices Such As Cell Phones, PDA, DSC, and
TSOP-6
Top View
1
6
DVC
(4) S
3 mm
2
3
5
4
(3) G
2.85 mm
(1, 2, 5, 6) D
Ordering Information: Si3867DV-T1-E3 (Lead (Pb)-free)
Si3867DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
P-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
5s
Steady State
- 20
± 12
Unit
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current
T A = 25 °C
T A = 85 °C
I D
I DM
- 5.1
- 3.7
- 20
- 3.9
- 2.8
A
Continuous Diode Current (Diode Conduction) a
I S
- 1.7
- 0.9
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
T A = 25 °C
T A = 85 °C
P D
T J , T stg
2.0
1.0
- 55 to 150
1.1
0.6
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Foot (Drain)
t ≤ 5s
Steady State
Steady State
R thJA
R thJF
45
90
25
62.5
110
30
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72068
S09-2275-Rev. D, 02-Nov-09
www.vishay.com
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